• 2Gb = stacked device (two 1Gb die)
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–3.6V (I/O buffers)
• Asynchronous random/page read
– Page size: 16 words or 32 bytes
– Page access: 25ns
– Random access: 100ns (Fortified BGA); 110ns (TSOP)
• Buffer program: 512-word program buffer
• Program time
– 0.88µs per byte (1.14 MB/s) TYP when using full 512-word buffer size in buffer program
• Memory organization
– Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUSPEND operation
– Read or program another block during an ERASE SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to buffer capability
– Fast buffered/batch programming
– Fast block/chip erase
• VPP/WP# pin protection
– Protects first or last block regardless of block protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent, secure identification
– Programmed or locked at the factory or by the customer
• Low power consumption: Standby mode
• JESD47H-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Fortified BGA and TSOP packages
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°