• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–3.6V (I/O buffers)
– VPPH = 12V for fast program (optional)
• Asynchronous random/page read
– Page size: 8 words or 16 bytes
– Page access: 25, 30ns
– Random access: 60ns1, 70, 80ns
• Fast program commands: 32-word (64-byte) write buffer
• Enhanced buffered program commands: 256-word
• Program time
– 16µs per byte/word TYP
– Chip program time: 5s with VPPH and 8s without VPPH
• Memory organization
– Uniform blocks: 128 main blocks, 128-Kbytes or 64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUSPEND operation
– Read or program another block during an ERASE SUSPEND operation
• Unlock bypass, block erase, chip erase, write to buffer, enhanced buffer program commands
– Fast buffered/batch programming
– Fast block/chip erase
• VPP/WP# pin protection
– Protects first or last block regardless of block protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 128-word (256-byte) memory block for permanent, secure identification
• Common flash interface
– 64-bit security code
• Low power consumption: Standby and automatic mode
• Minimum 100,00 PROGRAM/ERASE cycles per block
• RoHS compliant packages
– 56-pin TSOP (N) 14mm x 20mm
– 64-ball TBGA (ZA) 10mm x 13mm
– 64-ball FBGA (ZS) 11mm x 13mm
• Electronic signature
– Manufacturer code: 0020h
– M29W128GH uniform, last block protected by VPP/WP#: 227Eh + 2221h + 2201h
– M29W128GL uniform, first block protected by VPP/WP#: 227Eh + 2221h + 2200h
• Automotive device grade temperature
– –40°C to +125°C (automotive grade certified)